The report "GaN Power Devices Market
by Technology (Semiconductor Materials, Transistor Application
Technologies), Wafer (Wafer Processes, Wafer Size, and Design
Configuration), Device (Power Discrete, Power ICS), Products,
Application & Geography - Global Forecast to 2022", The
global GaN power devices market is estimated to reach USD 2.60 Billion
by 2022 at a CAGR of 24.5% from 2016 to 2022. Three major segments
which show tremendous growth are satellite communication, RADAR, and
wireless application due to the new launches of GaN power semiconductor
devices for these application segments and continuous technological
developments to improve the power handling capacity and increasing the
switching frequency. This report analyzes the Global GaN Power Devices
market with respect to market drivers, opportunities, and trends in
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Browse 92 market data Tables and 97 Figures spread through 201 Pages and in-depth TOC on "GaN Power Devices Market - Forecast to 2022"
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Emergence of new technologies will drive the growth
The development of GaN-on-Silicon technology, with GaN deposited on highly doped silicon substrates in the end of the previous century, facilitated development of high-brightness and ultra-high brightness LEDs. Several other technologies facilitated development of organic and phosphor LEDs, leading to production of several blue, violet, purple, UV, and white LEDs throughout the past decade. The latest development that aids this field is quantum dots (QD) technology. The biggest advantage and driver for the GaN semiconductor devices market is the continuous emergence of technologies to overcome the challenges faced at every stage, thereby increasing the production volume every year.
Information communication technology and consumer electronics segments contribute maximum market share
The ICT sector combines both Information technology and communication (including all forms of communication, such as RF, satellite, and telecommunication) sectors. The technological evolution of the GaN semiconductor devices is accelerating the usage of GaN-enabled devices in this end user sector,
primarily owing to increased demand and extensive industry focus on various types of RF and wireless applications.
Consumer electronics is one of the major revenue contributing end use sectors, with significant revenue for GaN opto-semiconductor devices. The revenue growth is slowly gaining pace with slow penetration of GaN power semiconductor devices for various consumer applications.
Japan expected to contribute the largest market share for GaN Wafer Market
Japan is expected to have the largest market share and dominate the GaN wafer market from 2016 to 2022. The market in Japan is driven by the rise in applications in this region and continuous developments taking place in the semiconductor industry. Japan stands second among all geographical regions, in terms of key player distribution, with several players being headquartered in this country.
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Some of the major players in Japan for GaN semiconductor devices are Renesas Electronics (Japan), ROHM Company Limited (Japan), Nichia Corporation (Japan), Toshiba Corporation (Japan), Toyoda Gosei Limited (Japan), and others.
Some of the key market players in the GaN power devices market in this report are Fujitsu Ltd. (Japan), Toshiba Corp. (Japan), Koninklijke Philips N.V. (Netherlands), Texas Instruments (U.S.), EPIGAN NV (Belgium), NTT Advanced Technology Corporation (Japan), RF Micro Devices Incorporated (U.S.), Cree Incorporated (U.S.), Aixtron SE (Germany), International Quantum Epitaxy plc (U.K.), Mitsubishi Chemical Corporation (Japan), AZZURO Semiconductors AG (Germany) among others.
The scope of the report covers detailed information regarding the major factors influencing the growth of the GaN power devices market such as drivers, restraints, challenges, and opportunities. A detailed analysis of the key industry players has been carried out to provide insights into their business overview, products and services, key strategies, new product launches, mergers & acquisitions, partnerships, agreements, collaborations and recent developments associated with the GaN power devices market.
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