The report “Silicon Carbide (SiC) Semiconductor Materials and Devices (Discretes & Chips) Market, Global Forecasts & Analysis (2012-2022)” defines and segments the global SiC Semiconductor market with analysis and forecasting of the revenues and volumes for the overall market and all its sub-segments.
Browse more than 200 market data tables & figures spread through 456 pages and in-depth TOC on “Silicon Carbide (SiC) Semiconductor Materials and Devices (Discretes & Chips) Market, Global Forecasts & Analysis (2012-2022)”.
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The global SiC semiconductor industry’s value chain has grown to a vast network of players involved in various industry segments. There have been tremendous changes in the landscape of the SiC semiconductor industry supply chain with several developments in all the segments such as raw material suppliers, EDA & design tool vendors, wafer manufacturers, wafer equipment vendors, foundry models, fabless players, fab facilities, IDMs, ODMs, OEMs, ATP players, and so on. The wafer manufacturers’, wafer equipment manufacturers’ landscape is very dynamic, with increasing number of players in these two segments and has high level of collaborations, agreements, and partnerships activities among the players.
The ODM & IDM segments are obviously the fastest growing segments with several new product & technology-launches taking place every year. In the supply chain landscape, both upstream and downstream sectors have different landscapes, with new wafer manufacturing technologies related to epitaxy process, dyeing, etching, and wafer diameters playing a major role in the upstream and new device fabrication technologies related to technology node, circuit design, assembly & packaging making their mark in the downstream.
This research study on the SiC semiconductors market and industry gives a detailed overview of the global SiC semiconductor devices market in the present scenario, and discusses the history, evolution, market by technology (polymer types and substrate & epitaxy materials), market by products and devices, market by application segments and by geography. Each classification done for the global SiC semiconductor devices market has extensive segmentation with market estimates and forecasts till 2022 for each sub-market in terms of both revenues and volumes. The major SiC semiconductor products – namely, the power semiconductors, opto semiconductors and high temperature semiconductors are analyzed in great detail throughout the research study in every type of classification.
The report published on this research study mainly focuses on three major aspects. They are the SiC semiconductors Market Overview, the SiC semiconductors Market Analysis (Dynamics) and the SiC semiconductor Market Classification (Segmentation). Extensive and detailed classification of the SiC semiconductor devices market is done in this report by technology, products, devices, application & geography. Since the report mainly covers the SiC Semiconductor market whose parent market is the global semiconductor market, the reports also includes various aspects related to the overall semiconductor industry in several instances throughout the report in various chapters. A comparison of various aspects, of each market segment with its parent market (for example, SiC power semiconductors with overall power semiconductors) is done at every possible level to give an idea about the total addressable markets for each market segment and the market penetration rates.
The report also analyzes the entire SiC semiconductor industry’s value chain, and gives an overview of the major industry segments. It discusses the dynamics of various industry segments such as Raw Materials, EDA & Design Tool Vendors, Foundry, Fab and IDM vendors, along with focus on the industry life cycle. The complete supply chain of the industry has been discussed in great detail, emphasizing on both – the upstream and downstream chains.
Among the polymer types of SiC material in devices, 3C-SiC devices currently hold the largest share, followed by 4H-SiC devices and 6H-SiC devices respectively. In terms of growth rate of the market sizes and grabbing the market shares, 4H-SiC is on the fore-front, followed by 6H-SiC devices market. Among the upcoming wide-band gap materials used along with SiC for making devices, in epitaxy, buffer layer or substrate, upcoming ones are Sapphire (in LEDs), AlN, GaN and several Indium alloy materials. Among them, GaN-on-SiC structure used in RF & high power devices is gaining popularity and increasingly used in production, among devices that use SiC as a substrate in semiconductor wafers.
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In the “technology process nodes” landscape, the current SiC devices foundry processes mostly adopt nodes between 250 nm and 90 nm, the primary reason being that 65 nm and below, i.e. the advanced sub-micron levels, are suitable only for the digital semiconductor production and not for the RF, power, high-temperature devices, in terms of yield, cost, and related aspects. Currently, 90 nm is estimated to be one with the largest percentage share among all the technology nodes, closely followed by 130 nm, 150 nm, and 180 nm, when considered globally. It is expected that the SiC semiconductor industry slowly adopts sub-micron nodes in the far future and more advanced, sophisticated SiC devices, in power, opto and high-temperature applications come up post 2017.
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