RF Power Semiconductor Market Outlook to 2022 Based On Product, Material, Frequency, Application

Increasing demand for smartphones and higher data speed to drive the for RF power semiconductor market. The RF power semiconductor market size, in terms of value, is expected to grow from $10.57 billion in 2015 to $31.26 billion by 2022, at a CAGR of 15.4% between 2016 and 2022.

Complete report on RF power semiconductor market spread across 155 pages, profiling 10 companies and supported with 70 tables and 57 figures is now available at .

RF power semiconductor manufacturers have witnessed an increased shipment of devices for various applications such as aerospace & defense, medial, consumer, automotive, and telecommunication and data communication among others. The growing demand for smartphones and the need for higher data rate such as use of LTE and 5G in the near future would drive the RF power semiconductor market.

In RF power semiconductor market, aerospace & defense application market to gain maximum traction during the forecast period. The aerospace & defense application market is estimated to grow at the highest CAGR during the forecast period. The defense equipment manufacturers are increasingly using RF power devices for applications in radar systems and avionics. The growth in the production of defense equipment across the globe owing to increased investment in defense sector is driving the market for RF power semiconductor devices.

RF power semiconductor market in APAC region grows at the highest rate during the forecast period. APAC is the largest and the fastest-growing region for RF power semiconductor devices owing to the increasing number of consumers using smartphones and established electronics industry in APAC. The RF power semiconductor market in the North America held the second-largest market size in 2015 and has a steady growth rate. Despite being a mature market, the growth in the North American market is highly sustainable because of the presence of a large number of manufacturers in the region. Get sample report at .

Key Audience for This Report:

• End users
• Analysts and strategic business planners
• Governments, financial institutions, and investment communities
• Technology standards organizations, forums, alliances, and associations
• Research organizations
• Original equipment manufacturers (OEMs) (end-user application or electronic product manufacturers)
• Semiconductor foundries
• Raw material and manufacturing equipment suppliers

In the process of determining and verifying, the market size for several segments and sub segments gathered through secondary research, extensive primary interviews were conducted with key people. In Tier 1 (55%), Tier 2 (20%) and Tier 3 (25%) companies were contacted for primary interviews. The interviews were conducted with various key people such as C-level Executives (25%), Managers (55%) and Directors (20%) from various key organizations operating in the RF power semiconductor market. The primary interviews were conducted worldwide covering regions such as North America (30%), Europe (20%), APAC (45%), and RoW (5%).

The key players in the RF power semiconductor market profiled in the report are Infineon Technologies AG (Germany), NXP Semiconductors N.V. (Netherlands), Qorvo, Inc. (U.S.), Broadcom Limited (U.S.), Toshiba Corporation (Japan), Qualcomm Inc. (U.S.), M/A-COM Technology Solutions Holdings, Inc. (U.S.), Skyworks Solutions, Inc. (U.S.), Mitsubishi Electric Corporation (Japan) and Murata Manufacturing (Japan). For More Info Make an Inquiry onRF Power Semiconductor Market by Product (Power Amplifiers, Passives, Switches, and Duplexers), Material (Silicon, Gallium Nitride, and Gallium Arsenide), Frequency, Application (Consumer, and Aerospace & Defense), and Geography - Global Forecast to 2022” research report at .

On a related note, another research titled Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market Forecast & Analysis to 2013 - 2022 says, the scope of this report includes only the market for semiconductor core devices manufactured using Gallium Nitride, as their epitaxy or substrate material. The report of GaN device and wafer market identifies the entire market and all its sub-segments through extensively detailed classifications, in terms of revenue, shipments and ASPs. Companies like Fujitsu Limited, Toshiba Corporation, Koninklijke Philips N.V., Texas Instruments Incorporated, Mitsubishi Chemical Corporation, Azzurro Semiconductors Ag, EpiGAN Nv, Nippon Telegraph & Telephone – Advance Technology Corporation, RF Micro Devices Incorporated, Cree Incorporated, Aixtron Se and International Quantum Epitaxy PLC have been profiled in this 417 pages research report available at .

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